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Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy

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Abstract

Multilayer structures of InGaAs/GaAs quantum dots fabricated by submonolayer migrationstimulated epitaxy have been studied experimentally by scanning tunneling microscopy and results are presented. These results clearly show that in multilayer structures, ordering of nanoobjects into rows occurs in InAs and InGaAs heteroepitaxial layers.

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Authors and Affiliations

  1. Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg

    G. É. Cirlin, V. N. Petrov, S. A. Masalov, A. O. Golubok & N. N. Ledentsov

  2. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

    G. É. Cirlin, V. N. Petrov, S. A. Masalov, A. O. Golubok & N. N. Ledentsov

Authors
  1. G. É. Cirlin
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  2. V. N. Petrov
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  3. S. A. Masalov
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  4. A. O. Golubok
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  5. N. N. Ledentsov
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Additional information

Pis#x2019;ma Zh. Tekh. Fiz. 23, 80–84 (November 26, 1997)

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Cirlin, G.É., Petrov, V.N., Masalov, S.A. et al. Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy. Tech. Phys. Lett. 23, 893–894 (1997). https://doi.org/10.1134/1.1261923

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  • DOI: https://doi.org/10.1134/1.1261923

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