Abstract
Experimental data on electron and hole mobility in three silicon carbide polytypes, 4H-SiC, 6H-SiC, and 3C-SiC, are analyzed. A semiempirical model is proposed for describing the dependence of the majority carrier mobility on temperature and doping level. The model describes well the accumulated body of experimental data and can be applied to model characteristics of multilayer silicon carbide structures.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 4, 2001, pp. 406–409.
Original Russian Text Copyright © 2001 by Mnatsakanov, Pomortseva, Yurkov.
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Mnatsakanov, T.T., Pomortseva, L.I. & Yurkov, S.N. Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level. Semiconductors 35, 394–397 (2001). https://doi.org/10.1134/1.1365181
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DOI: https://doi.org/10.1134/1.1365181