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Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

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Abstract

One of the modern methods for modifying semiconductors using beams of protons and alpha particles is analyzed; this modification is accomplished by the controlled introduction of radiation defects into the semiconductor. It is shown that doping semiconductors with radiation defects produced by irradiation with light ions opens up fresh opportunities for controlling the properties of semiconducting materials and for the development of new devices designed for optoelectronics, microelectronics, and nanoelectronics based on these materials; these devices differ favorably from those obtained by conventional doping methods, i.e., by diffusion, epitaxy, and ion implantation.

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  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    V. A. Kozlov

  2. St. Petersburg State Technical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia

    V. V. Kozlovski

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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 7, 2001, pp. 769–795.

Original Russian Text Copyright © 2001 by Kozlov, Kozlovski.

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Kozlov, V.A., Kozlovski, V.V. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles. Semiconductors 35, 735–761 (2001). https://doi.org/10.1134/1.1385708

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