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The microstructure and physical properties of thin SnO2 films

  • Atomic Structure and Nonelectronic Properties of Semiconductors
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Abstract

Thin polycrystalline SnO2 films were deposited on glass substrates by magnetron sputtering. Electrical, optical, and gas-sensing properties, as well as the structure and phase composition of the films, were studied. The electrical resistance of the films and the concentration and mobility of free charge carriers were determined by the four-point-probe and van der Pauw methods. The band gap and the type of optical transitions in the films were derived from optical absorption spectra. The sensitivity to toxic and explosive gases was measured. The composition, morphology, and crystal structure of the films annealed at 600°C were examined by X-ray diffraction and electron microscopy. The films were found to contain only a tetragonal SnO2 phase and have good crystallinity. The average grain size in the annealed films is 11–19 nm. A model of the electrical conduction in the polycrystalline SnO2 films is discussed.

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Authors and Affiliations

  1. Voronezh State Technical University, Moskovskii pr. 14, Voronezh, 394026, Russia

    S. I. Rembeza, T. V. Svistova & O. I. Borsyakova

  2. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394693, Russia

    E. S. Rembeza

Authors
  1. S. I. Rembeza
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  2. T. V. Svistova
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  3. E. S. Rembeza
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  4. O. I. Borsyakova
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 7, 2001, pp. 796–800.

Original Russian Text Copyright © 2001 by S. Rembeza, Svistova, E. Rembeza, Borsyakova.

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Rembeza, S.I., Svistova, T.V., Rembeza, E.S. et al. The microstructure and physical properties of thin SnO2 films. Semiconductors 35, 762–765 (2001). https://doi.org/10.1134/1.1385709

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  • DOI: https://doi.org/10.1134/1.1385709

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