Abstract
The magnetic-field dependences of the Hall coefficient and the conductivity of n-type CdxHg1−x Te epitaxial structures were measured at 77 K. The structures were grown by molecular-beam epitaxy with a prescribed solid solution composition profile across the thickness. A specific feature of the obtained dependences is that the conductivity and the absolute value of the Hall coefficient decrease with an increasing magnetic field. The obtained experimental dependences can only be described in terms of a model including low-mobility electrons. It is shown that anodic oxide deposited onto the CdxHg1−x Te film surface makes the concentration of low-mobility electrons higher and that of anodic fluoride lower. The possible reasons for the appearance of low-mobility electrons are discussed. The most probable sources of such electrons are surface layers and electrical microheterogeneities in CdxHg1−x Te films.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 9, 2001, pp. 1036–1040.
Original Russian Text Copyright © 2001 by Varavin, Kravchenko, Sidorov.
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Varavin, V.S., Kravchenko, A.F. & Sidorov, Y.G. A study of galvanomagnetic phenomena in MBE-grown n-CdxHg1−x Te films. Semiconductors 35, 992–996 (2001). https://doi.org/10.1134/1.1403562
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DOI: https://doi.org/10.1134/1.1403562