Skip to main content
SpringerLink
Log in

Peculiarities in the mechanism of current flow through an ohmic contact to gallium phosphide

  • Published:
Technical Physics Letters Aims and scope Submit manuscript

Abstract

The temperature dependence of the electric resistance of the In-GaP ohmic contact has been studied in the range from 77 to 420 K. The resistance was measured in GaP plates of various thickness with two In ohmic contacts. The measured ohmic contact resistance increases with temperature in the interval from 230–420 K. It is suggested that the In-GaP ohmic contact is formed by metallic shunts appearing upon deposition of In atoms on dislocations and other imperfections present (with a density evaluated at (4.5–8)×107 cm−2) in the subsurface region of the semiconductor.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. E. H. Rhoderick, Metal-Semiconductor Contacts (Clarendon, Oxford, 1978; Radio i Svyaz’, Moscow, 1982).

    Google Scholar 

  2. A. Y. C. Yu, Solid-State Electron. 13, 239 (1970).

    Google Scholar 

  3. A. Katz, S. Nakahara, W. Savin, and B. E. Weir, J. Appl. Phys. 68, 4133 (1990).

    ADS  Google Scholar 

  4. T. Clausen and O. Leistiko, Appl. Phys. Lett. 62, 1108 (1993).

    Article  ADS  Google Scholar 

  5. S. N. G. Chu, A. Katz, T. Boone, et al., J. Appl. Phys. 67, 3754 (1990).

    Article  ADS  Google Scholar 

  6. J.-S. Jang and T.-Y. Seong, Appl. Phys. Lett. 76, 2743 (2000).

    ADS  Google Scholar 

  7. T. V. Blank, Yu. A. Goldberg, E. V. Kalinina, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 550 (2001) [Semiconductors 35, 529 (2001)].

    Google Scholar 

  8. H. Shimawaki, N. Furuhata, and K. Honjo, J. Appl. Phys. 69, 7939 (1991).

    Article  ADS  Google Scholar 

  9. Z. Fan, S. N. Mohammad, W. Kim, et al., Appl. Phys. Lett. 68, 1672 (1996).

    ADS  Google Scholar 

  10. J. D. Guo, C. I. Lin, M. S. Feng, et al., Appl. Phys. Lett. 68, 235 (1996).

    ADS  Google Scholar 

  11. A. A. Bergh and P. J. Dean, Light Emitting Diodes (Clarendon, Oxford, 1976; Mir, Moscow, 1979).

    Google Scholar 

  12. T. V. Blank and Yu. A. Goldberg, Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1025 (2003) [Semiconductors 37, 999 (2003)].

    Google Scholar 

  13. J. Narayan, P. Tiwari, X. Chen, et al., Appl. Phys. Lett. 61, 1290 (1992).

    Article  ADS  Google Scholar 

  14. E. J. Miller, D. M. Schaadt, E. T. Yu, et al., J. Appl. Phys. 94, 7611 (2003).

    Article  ADS  Google Scholar 

  15. E. J. Miller, E. T. Yu, P. Waltereit, and J. S. Speck, Appl. Phys. Lett. 84, 535 (2004).

    Article  ADS  Google Scholar 

  16. V. V. Evstropov, M. Dzhumaeva, Yu. V. Zhilyaev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1357 (2000) [Semiconductors 34, 1305 (2000)].

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    T. V. Blank, Yu. A. Goldberg, O. V. Konstantinov, V. G. Nikitin & E. A. Posse

Authors
  1. T. V. Blank
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Yu. A. Goldberg
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. O. V. Konstantinov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. G. Nikitin
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. E. A. Posse
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

__________

Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 30, No. 19, 2004, pp. 17–24.

Original Russian Text Copyright © 2004 by Blank, Goldberg, Konstantinov, Nikitin, Posse.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Blank, T.V., Goldberg, Y.A., Konstantinov, O.V. et al. Peculiarities in the mechanism of current flow through an ohmic contact to gallium phosphide. Tech. Phys. Lett. 30, 806–809 (2004). https://doi.org/10.1134/1.1813716

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1134/1.1813716

Keywords

Search

Navigation