Abstract
The optical properties of layers of C60 fullerene on a silicon substrate are studied before and after a reducing annealing at 900–1050°;C in a hydrogen atmosphere in order to detect the formation of silicon-carbide clusters. It is shown, on the basis of Raman scattering, infrared absorption, time-resolved photoluminescence spectra, and ellipsometric measurements, that the SiC clusters are not detected at the accuracy of the methods used. After annealing, the layer is in the form of a porous hydrogen-rich film of disordered graphite, possibly with a small amount of fullerene molecules.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 8, 2005, pp. 1017–1020.
Original Russian Text Copyright © 2005 by Sreseli, Zakharova, Vul’, Makarova, Sharonova, Belyakov, Goryachev.
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Sreseli, O.M., Zakharova, I.B., Vul’, S.P. et al. Interaction of fullerene with single-crystal silicon. Semiconductors 39, 983–986 (2005). https://doi.org/10.1134/1.2010697
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DOI: https://doi.org/10.1134/1.2010697