Abstract
Germanium dioxide films containing Ge nanocrystals are studied. The films have been prepared by two methods: (i) deposition from supersaturated GeO vapors with subsequent decomposition of metastable germanium monoxide into a heterophase Ge:GeO2 system, and (ii) formation of anomalously thick native germanium oxides with a GeO2(H2O) chemical composition by a catalyst-accelerated oxidation of germanium. The films, which have been prepared on various substrates, are studied using the photoluminescence technique, Raman spectroscopy, spectral ellipsometry, and high-resolution electron microscopy. In the GeO2 films with built-in Ge nanoclusters, intense photoluminescence is detected at room temperature. The nanocluster sizes are estimated from the position of the Raman peak related to localized optical phonons. The correlation between a decrease in the nanocluster size and the shift of the photoluminescence peaks to the blue spectral region as the relative Ge content decreases is revealed. The presence of nanoclusters is confirmed by the data obtained from high-resolution electron microscopy. The correlation of the optical gap calculated taking into account the quantum confinement of electrons and holes in the nanoclusters with the experimentally observed luminescence peak is established. It can be concluded from the data obtained that the Ge nanoclusters constructed in the GeO2 matrix represent type I quantum dots.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
T. T. Shimizu-Iwayama, K. Fujita, S. Nakao, et al., J. Appl. Phys. 75, 7779 (1994).
V. Yu. Timoshenko, M. G. Lisachenko, B. V. Kamenev, et al., Appl. Phys. Lett. 84, 2512 (2002).
S. Takeoka, M. Fujii, S. Hayashi, and K. Yamamoto, Phys. Rev. B 58, 7921 (1998).
I. E. Tyschenko, V. A. Volodin, L. Rebohle, et al., Fiz. Tekh. Poluprovodn. 33, 559 (1999) [Semiconductors 33, 523 (1999)].
N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, Phys. Rev. Lett. 86, 1355 (2001).
D. Nesheva, C. Raptis, A. Perakis, et al., J. Appl. Phys. 92, 4678 (2002).
G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 685 (2002) [Semiconductors 36, 647 (2002)].
V. A. Volodin, E. B. Gorokhov, M. D. Efremov, et al., Pis’ma Zh. Éksp. Teor. Fiz. 77, 485 (2003) [JETP Lett. 77, 411 (2003)].
N. N. Ovsyuk, E. B. Gorokhov, V. V. Grishchenko, et al., Pis’ma Zh. Éksp. Teor. Fiz. 47, 248 (1988) [JETP Lett. 47, 298 (1988)].
E. B. Gorokhov, V. V. Grishchenko, N. N. Ovsyuk, and L. I. Fedina, Poverkhnost, No. 10, 82 (1990).
E. B. Gorokhov and V. V. Grishchenko, in Ellipsometry: Theory, Methods, and Applications, Ed. by A. V. Rzhanov (Nauka, Novosibirsk, 1987), p. 147 [in Russian].
V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors (Naukova Dumka, Kiev, 1987) [in Russian].
A. M. Mishchenko, Preprint, IFP SO RAN (Inst. of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 1979).
M. D. Efremov, V. A. Volodin, V. A. Sachkov, et al., Pis’ma Zh. Éksp. Teor. Fiz. 70, 73 (1999) [JETP Lett. 70, 75 (1999)].
V. Pailard and P. Puech, J. Appl. Phys. 86, 1921 (1999).
D. E. Aspnes, Thin Solid Films 89, 249 (1982).
G. Nelin and G. Nilsson, Phys. Rev. B 5, 3151 (1972).
Shang-Fen Ren and Wei Cheng, Phys. Rev. B 66, 205328 (2002).
L. D. Landau and E. M. Lifshitz, Course of Theoretical Physics, Vol. 3: Quantum Mechanics: Non-Relativistic Theory, 4th ed. (Nauka, Moscow, 1989; Pergamon, Oxford, 1977).
V. A. Burdov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 1233 (2002) [Semiconductors 36, 1154 (2002)].
T. V. Torchinska, A. Diaz Cano, M. Morales Rodrigues, and L. Yu. Khomenkova, Physica B (Amsterdam) 340–342, 1113 (2003).
D. Kovalev, H. Heckler, M. Ben-Chorin, et al., Phys. Rev. Lett. 81, 2803 (1998).
M. Lannoo, C. Delerue, and G. Allan, J. Lumin. 70, 170 (1996).
Y. C. King, T. J. King, and C. Hu, in Technical Digest of International Electron Devices Meeting (1998), p. 115.
E. B. Gorokhov, A. M. Mishchenko, I. G. Kovalenko, et al., Poverkhnost, No. 5, 67 (1983).
E. B. Gorokhov, I. G. Kosulina, S. V. Pokrovskaya, and I. G. Neizvestny, Phys. Status Solidi A 101, 451 (1987).
E. B. Gorokhov, S. V. Pokrovskaya, and I. G. Neizvestnyi, Poverkhnost, No. 4, 103 (1983).
E. B. Gorokhov and A. L. Aseev, in Semiconductors, Ed. by I. G. Neizvestnyi (Inst. Fiz. Poluprovodn. Sib. Otd. Ross. Akad. Nauk, Novosibirsk, 1995), p. 199 [in Russian].
E. B. Gorokhov, Poverkhnost, No. 9, 76 (1992).
L. Rebohle, J. von Borany, D. Borchert, et al., Electrochem. Solid-State Lett. 4, G57 (2001).
Author information
Authors and Affiliations
Additional information
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 10, 2005, pp. 1210–1217.
Original Russian Text Copyright © 2005 by Gorokhov, Volodin, Marin, Orekhov, Cherkov, Gutakovski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Shvets, Borisov, Efremov.
Rights and permissions
About this article
Cite this article
Gorokhov, E.B., Volodin, V.A., Marin, D.V. et al. Effect of quantum confinement on optical properties of Ge nanocrystals in GeO2 films. Semiconductors 39, 1168–1175 (2005). https://doi.org/10.1134/1.2085265
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.2085265