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A high-power semiconductor switch of high-voltage pulses with a rise time of nanosecond duration

  • Electronics and Radio Engineering
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Abstract

The results of studies of new fast-acting semiconductor devices—deep-level dynistors intended for use in high-power devices of nano-and microsecond pulsed-power technology—are presented. The possibility of switching multikiloampere current pulses having a rise rate of 200 kA/μs with the use of a single device with a 12-mm-diameter structure is shown. A high-power switch based on an assembly of dynistors with an operating voltage of 12 kV connected in series is described. The switch is capable of switching current pulses with a 1200-A amplitude and a 4-ns rise time.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russia

    Yu. V. Aristov, V. B. Voronkov, I. V. Grekhov, A. K. Kozlov, S. V. Korotkov & A. G. Lyublinskii

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  1. Yu. V. Aristov
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  2. V. B. Voronkov
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  3. I. V. Grekhov
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  4. A. K. Kozlov
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  5. S. V. Korotkov
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  6. A. G. Lyublinskii
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Additional information

Original Russian Text © Yu.V. Aristov, V.B. Voronkov, I.V. Grekhov, A.K. Kozlov, S.V. Korotkov, A.G. Lyublinskii, 2007, published in Pribory i Tekhnika Eksperimenta, 2007, No. 2, pp. 87–90.

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Aristov, Y.V., Voronkov, V.B., Grekhov, I.V. et al. A high-power semiconductor switch of high-voltage pulses with a rise time of nanosecond duration. Instrum Exp Tech 50, 224–227 (2007). https://doi.org/10.1134/S0020441207020091

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  • DOI: https://doi.org/10.1134/S0020441207020091

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