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Microwave photoresistance of a double quantum well at high filling factors

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Abstract

The effect of millimeter wave radiation on the electronic transport in a GaAs double quantum well at a temperature of 4.2 K in a magnetic field of up to 2 T has been studied. Resistance (conductance) oscillations have been shown to appear in the two-dimensional electronic system under investigation at high filling factors. The magnetic field positions of the oscillation maxima are determined by the condition ΔSAS/ħ = lωc, where ΔSAS = (E 2 − E 1) is the size quantization sublevel splitting in the quantum well, ωc is the cyclotron frequency, and l is a positive integer. It has been found that the microwave field substantially modifies the oscillations in the double quantum well, which results in alternating two-frequency oscillations of photoresistance with the inverse magnetic field.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    A. A. Bykov, D. R. Islamov, A. V. Goran & A. I. Toropov

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  1. A. A. Bykov
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  2. D. R. Islamov
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  3. A. V. Goran
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  4. A. I. Toropov
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Correspondence to A. A. Bykov.

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Original Russian Text © A.A. Bykov, D.R. Islamov, A.V. Goran, A.I. Toropov, 2008, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2008, Vol. 87, No. 9, pp. 563–567.

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Bykov, A.A., Islamov, D.R., Goran, A.V. et al. Microwave photoresistance of a double quantum well at high filling factors. Jetp Lett. 87, 477–481 (2008). https://doi.org/10.1134/S0021364008090063

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