Abstract
Condensation of exciton polaritons in planar microcavities with GaAs/AlAs quantum wells in the active area has been studied. It has been found that an increase in the lifetime of polaritons up to ∼10–15 ps when the Q factor of a microcavity exceeds 7000 makes it possible to detect Bose-Einstein condensation of polaritons with a dominant (>90%) photon component. Condensation occurs under thermodynamically nonequilibrium conditions in lateral traps with diameters ∼10 μm formed due to long-range fluctuations of the polariton potential. The violet shift of the polariton emission line at the condensation threshold significantly exceeds the energy of the repulsive interaction between polaritons in the condensate. It has been shown that the shift is mainly due to a decrease in the oscillator strength of bright excitons in lateral traps, caused by the localization of photoexcited long-living dark excitons.
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Original Russian Text © V.D. Kulakovskii, A.V. Larionov, S.I. Novikov, S. Höfling, Ch. Schneider, A. Forchel, 2010, published in Pis’ma v Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2010, Vol. 92, No. 9, pp. 659–664.
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Kulakovskii, V.D., Larionov, A.V., Novikov, S.I. et al. Bose-einstein condensation of exciton polaritons in high-Q planar microcavities with GaAs quantum wells. Jetp Lett. 92, 595–599 (2010). https://doi.org/10.1134/S002136401021006X
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DOI: https://doi.org/10.1134/S002136401021006X