Skip to main content
Log in

The quantum confinement effect observed in the multiple quantum wells Mg0.27Zn0.73O/ZnO

  • Advanced Laser Technologies
  • Published:
Laser Physics

Abstract

The multiple quantum wells (MQW) Mg0.27Zn0.73O/ZnO have been grown by pulsed laser deposition method with different well width L w . The optical and structural characteristics of MQW Mg0.27Zn0.73O/ZnO have been investigated. The quantum confinement effect showing up in the blue shift of exciton peak in low temperature (8 K) photoluminescence spectra at well width reduction has been studied. It is established that intensity exciton peak I ex and Einstein’s characteristic temperature Θ E increase at reduction of well width L w . It is revealed that the discontinuity ratio of conduction and a valence bands in heterostructure Mg0.27Zn0.73O/ZnO is 0.65/0.35 that corresponds to the literature.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. F. E. Shubert, Light-Emitting Diodes (Troy, New York, 2008).

    Google Scholar 

  2. S. E. Nikitin, Yu. A. Nikolaev, I. K. Polushina, V. Yu. Rud, Yu. V. Rud, and E. I. Terukov, Semiconductors 37, 1329 (2003).

    Article  Google Scholar 

  3. A. V. Sacharov, V. V. Lundin, V. A. Semenov, and A. S. Usikov, Tech. Phys. 25, 12 (1999).

    Article  Google Scholar 

  4. V. Kuryatkov, G. Kipshidze, S. N. G. Chu, M. Holtz, and Yu. Kudryavtsev, Appl. Phys. Lett. 83, 7 (2003).

    Article  Google Scholar 

  5. Y. Ryu, T.-S. Lee, J. A. Lubguban, H. W. White, B.-J. Kim, Y.-S. Park, and C.-J. Youn, Appl. Phys. Lett. 88, 241108 (2006).

    Article  ADS  Google Scholar 

  6. V. N. Bagratashvili, N. V. Minaev, A. A. Rybaltovsky, A. O. Rybaltovsky, S. I. Tsypina, V. Ya. Panchenko, and Yu. S. Zavorotny, Laser Phys. 20, 139 (2010).

    Article  ADS  Google Scholar 

  7. V. N. Bagratashvili, A. O. Rybaltovsky, N. V. Minaev, P. S. Timashev, V. V. Firsov, and V. I. Yusupov, Laser Phys. Lett. 7, 401 (2010).

    Article  ADS  Google Scholar 

  8. T. Makino, Y. Segava, M. Kawasaki, and H. Koinuma, Semicond. Sci. Technol. 20, 78 (2005).

    Article  ADS  Google Scholar 

  9. U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchkov, S. Dogan, V. Avrutin, S.-J. Cho, and H. Morcoc, J. Appl. Phys. 98, 041301 (2005).

    Article  ADS  Google Scholar 

  10. O. A. Novodvorsky, L. S. Gorbatenko, V. Ya. Panchenko, O. D. Khramova, Ye. A. Cherebilo, C. Wenzel, J. W. Bartha, N. Trumpaicka, V. T. Bublik, and K. D. Scherbachev, Semiconductors 43, 439 (2009).

    Article  ADS  Google Scholar 

  11. Zg. I. Alpherov, Semiconductors 32, 3 (1998).

    ADS  Google Scholar 

  12. X. Q. Gu, L. P. Zhu, Z. Z. Ye, H. P. He, Y. Z. Zhang, F. Huang, M. X. Qiu, Y. J. Zeng, F. Liu, and W. Jaeger, Appl. Phys. Lett. 91, 022103 (2007).

    Article  ADS  Google Scholar 

  13. P. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, 2002).

  14. P. A. Tipler and R. A. Llewellyn, Modern Physics (Freeman, New York, 2007).

    Google Scholar 

  15. W. I. Park, G. C. Yi, M. Kim, and S. J. Pennycook, Adv. Mater. 15, 526 (2003).

    Article  Google Scholar 

  16. J. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, and T. Ohshima, Appl. Phys. Lett. 89, 262107 (2006).

    Article  ADS  Google Scholar 

  17. G. Coli and K. K. Bajaj, Appl. Phys. Lett. 78, 2861 (2001).

    Article  ADS  Google Scholar 

  18. O. L. Lazarenkova and A. N. Pihtin, Semiconductors 32, 1108 (1998).

    Article  Google Scholar 

  19. H. D. Sun, T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, J. Appl. Phys. 91, 6457 (2002).

    Article  ADS  Google Scholar 

  20. L. S. Gorbatenko, O. A. Novodvorsky, V. Ya. Panchenko, O. D. Khramova, Ye. A. Cherebilo, A. A. Lotin, C. Wenzel, N. Trumpaicka, and J. W. Bartha, Laser Phys. 19, 1152 (2009).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to A. A. Lotin.

Additional information

Original Text © Astro, Ltd., 2011.

The article is published in the original.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Lotin, A.A., Novodvorsky, O.A., Parshina, L.S. et al. The quantum confinement effect observed in the multiple quantum wells Mg0.27Zn0.73O/ZnO. Laser Phys. 21, 582–587 (2011). https://doi.org/10.1134/S1054660X11050215

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1054660X11050215

Keywords

Navigation