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Simulation of Charge Dynamics of a Photocathode Semiconductor Layer

  • MATHEMATICAL MODELING IN NUCLEAR TECHNOLOGIES
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Abstract

The impact of the generation of conduction electrons due to the laser-induced photoelectric effect on the charge dynamics of the semiconductor layer of the photocathode \(q\left( t \right)\) is considered. Qualitative and quantitative agreement between the dependence \(q\left( t \right)\) and the data of a numerical experiment has been achieved.

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Notes

  1. The agreement of the simulation with the experiment was achieved in a semiempirical way [23, 24].

  2. It can be shown that such a rate of concentration increase due to the photoelectric effect guarantees \(q\left( \infty \right) = 0\), which is very close to what is observed in the experiment (Fig. 1).

  3. Strictly speaking, the minimum found in this way will be local. The existence of a global minimum in such problems is not guaranteed. Of interest is the very possibility of obtaining agreement between theory and experiment, and not the parameters under which this agreement is achieved.

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Funding

This work was supported by ongoing institutional funding. No additional grants to carry out or direct this particular research were obtained.

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Authors and Affiliations

  1. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409, Moscow, Russia

    M. V. Vladimirov, S. M. Polozov & V. I. Rashchikov

Authors
  1. M. V. Vladimirov
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  2. S. M. Polozov
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  3. V. I. Rashchikov
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Correspondence to M. V. Vladimirov.

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Translated by N. Petrov

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Vladimirov, M.V., Polozov, S.M. & Rashchikov, V.I. Simulation of Charge Dynamics of a Photocathode Semiconductor Layer. Phys. Atom. Nuclei 86, 2628–2633 (2023). https://doi.org/10.1134/S1063778823110479

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