Abstract
Photoluminescence spectra of samples with ultrathin InGaN layers embedded in AlGaN and GaN matrices are studied experimentally in the temperature range of 80 to 300 K. It is shown that the temperature dependences can be understood in the context of Eliseev’s model and that, in the active region of the structures under study, the dispersion σ of the exciton-localization energy depends on the average In content in InGaN-alloy layers. Furthermore, the Urbach energy E U, which characterizes the localization energy of excitons in the tails of the density of states, was determined from an analysis of the shape of the low-energy slope of the spectrum. It is shown that σ and E U, quantities representing the scale of the exciton-localization effects, vary linearly with the photoluminescence-peak wavelength in the range from the ultraviolet to the green region of the spectrum.
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References
J. Christen and D. Bimberg, Phys. Rev. B 42, 7213 (1990).
P. G. Eliseev, J. Appl. Phys. 93, 5404 (2003).
D. S. Sizov, V. S. Sizov, G. E. Onushkin, et al., in Proceedings of 13th International Symposium on Nanostructures: Physics and Technology (St. Petersburg, 2005), p. 294.
S. O. Usov, A. F. Tsatsul’nikov, V. V. Lundin, et al., in Proceedings of 14th International Symposium on Nanostructures: Physics and Technology (St. Petersburg, 2006), p. 281.
S. O. Usov, A. F. Tsatsul’nikov, V. V. Lundin, et al., Semicond. Sci. Technol. 22, 528 (2007).
Yong-Hoon Cho, G. H. Gainer, A. J. Fischer, et al., Appl. Phys. Lett. 73, 1370 (1998).
R. J. Potter and N. Balkan, J. Phys.: Condens. Matter 16, S3387 (2004).
R. W. Martin, P. G. Middleton, K. P. O’Donnell, and W. Van der Stricht, Appl. Phys. Lett. 74, 263 (1999).
H. P. D. Schenk, M. Leroux, and P. Mierry, J. Appl. Phys. 88, 1525 (2000).
M. Oueslati, M. Zouaghi, M. E. Pistol, et al., Phys. Rev. B 32, 8220 (1985).
S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).
A. Satake, Y. Masumoto, T. Miyajima, et al., Phys. Rev. B 57, R2041 (1998).
S. Nakamura, IEEE J. Sel. Top. Quantum Electron. 3, 712 (1997).
E. I. Schubert, I. D. Goeofert, W. Grieshaber, and J. M. Redwing, Appl. Phys. Lett. 71, 921 (1997).
J. F. Muth, J. H. Lee, I. K. Shmagin, et al., Appl. Phys. Lett. 71, 1572 (1997).
M. D. Mc Cluskey, C. G. Van de Walle, C. P. Master, et al., Appl. Phys. Lett. 72, 2725 (1998).
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Original Russian Text © S.O. Usov, A.F. Tsatsul’nikov, V.V. Lundin, A.V. Sakharov, E.E. Zavarin, N.N. Ledentsov, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 2, pp. 187–191.
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Usov, S.O., Tsatsul’nikov, A.F., Lundin, V.V. et al. Photoluminescence of localized excitons in InGan quantum dots. Semiconductors 42, 188–191 (2008). https://doi.org/10.1134/S1063782608020115
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DOI: https://doi.org/10.1134/S1063782608020115