Abstract
The evolution of the Shubnikov-de Haas oscillations in InAs/AlSb heterostructures with twodimensional electron gas in InAs quantum wells 12–18 nm wide with considerable variation in the electron concentration (3–8) × 1011 cm−2 due to the effect of negative persistent photoconductivity is studied. The values of the effective Landé factor for electrons g* = −(15–35) are determined. It is shown that the value of the g* factor increases as the quantum well width increases.
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References
F. F. Fang and P. J. Stiles, Phys. Rev. 174, 823 (1968).
T. Ando and Y. Uemura, J. Phys. Soc. Jpn. 37, 1044 (1974).
S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).
O. E. Raishev and P. Debray. Phys. Rev. B, 65, 085319 (2002).
P. R. Hammer and M. Johnson, Phys. Rev. Lett. 88, 066806 (2002).
Yu. G. Sadofyev, A. Ramamoorthy, B. Naser, et al., Appl. Phys. Lett. 81, 1833 (2002).
V. N. Zverev, M. Muhammad, S. Rahman, et al., J. Appl. Phys. 96, 6353 (2004).
S. Brosig, K. Ensslin, A. G. Jansen, et al., Phys. Rev. B 61, 13045 (2000).
W. Zawadzki and R. Lassing, Surf. Sci. 142, 225 (1984).
A. Raymond, J. L. Robert, C. Bousquet, et al., Solid State Commun. 55, 271 (1985).
E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957).
H. R. Trebin, U. Rössler, and R. Ranvaud, Phys. Rev. B 20, 686 (1979).
R. Winkler, Surf. Sci. 361–362, 411 (1996).
Z. W. Zheng, B. Shen, Y. S. Gui, et al., J. Appl. Phys. 95, 2473 (2004).
E. L. Ivchenko and A. A. Kiselev, Fiz. Tekh. Poluprovodn. 26, 1471 (1992) [Sov. Phys. Semicond. 26, 827 (1992)].
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Original Russian Text © V.Ya. Aleshkin, V.I. Gavrilenko, A.V. Ikonnikov, S.S. Krishtopenko, Yu.G. Sadofyev, K.E. Spirin, 2008, published in Fizika i Tekhnika Poluprovodnikov, 2008, Vol. 42, No. 7, pp. 846–851.
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Aleshkin, V.Y., Gavrilenko, V.I., Ikonnikov, A.V. et al. Exchange enhancement of the g factor in InAs/AlSb heterostructures. Semiconductors 42, 828–833 (2008). https://doi.org/10.1134/S1063782608070129
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DOI: https://doi.org/10.1134/S1063782608070129