Abstract
The concept of a diffraction optical filter is used for prevention of high-order mode oscillation in a design of stripe laser diodes with an active region based on InAs/InGaAs quantum dots emitting in the 1.3-μm wavelength range grown on GaAs substrates. Incorporation of such a filter made it possible to increase the width of the stripe and obtain an output power as high as 700 mW with retention of a single-spatial-mode character of lasing.
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Original Russian Text © N.Yu. Gordeev, I.I. Novikov, A.M. Kuznetsov, Yu.M. Shernyakov, M.V. Maximov, A.E. Zhukov, A.V. Chunareva, A.S. Payusov, D.A. Livshits, A.R. Kovsh, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 10, pp. 1401–1406.
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Gordeev, N.Y., Novikov, I.I., Kuznetsov, A.M. et al. A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes. Semiconductors 44, 1357–1361 (2010). https://doi.org/10.1134/S1063782610100192
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DOI: https://doi.org/10.1134/S1063782610100192