Abstract
The temperature and concentration dependences of electron mobility in AlGaN/GaN hetero-structures are studied. The mobility for the samples under study at T = 300 K lies in the range of 450–1740 cm2/(V s). It is established that scattering at charged centers is dominant for samples with low mobility (lower than 1000 cm2/(V s) right up to room temperature. These centers are associated with a disordered piezoelectric charge at the heterointerface because of its roughness or with a piezoelectric charge similarly to the Al-GaN barrier because of alloy disorder, as well as with the deformation field around dislocations. Scattering at optical phonons is dominant for samples with mobility exceeding 1000 cm2/(V s) at T = 300 K. Scattering at alloy disorders, heterointerface roughness, and dislocations are dominant at temperatures lower than 200 K. A decrease in the influence of scattering at roughness with improvement of the heterointerface morphology increases room-temperature mobility from 1400 cm2/(V s) to 1700 cm2/(V s).
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Original Russian Text © D.Yu. Protasov, T.V. Malin, A.V. Tikhonov, A.F. Tsatsulnikov, K.S. Zhuravlev, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 1, pp. 36–47.
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Protasov, D.Y., Malin, T.V., Tikhonov, A.V. et al. Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas. Semiconductors 47, 33–44 (2013). https://doi.org/10.1134/S1063782613010181
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DOI: https://doi.org/10.1134/S1063782613010181