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Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films

  • XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
  • Published:
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Abstract

The angular dependences of the capacitance of structures based on PbSnTe:In films in a magnetic field B ≤ 4 T at various bias voltages, which have a distinct anisotropic pattern in the magnetic-field direction with capacitance modulation approximately by a factor of 1.5–2, are studied experimentally at T = 4.2 K. The data obtained are compared with the experimental anisotropic angular dependences of the space-charge-limited current with current modulation up to a factor of 102–104 or greater. A qualitative model of the results obtained is considered.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    A. E. Klimov & V. S. Epov

Authors
  1. A. E. Klimov
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  2. V. S. Epov
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Correspondence to V. S. Epov.

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Original Russian Text © A.E. Klimov, V.S. Epov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 11, pp. 1501–1508.

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Klimov, A.E., Epov, V.S. Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films. Semiconductors 50, 1479–1487 (2016). https://doi.org/10.1134/S1063782616110130

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  • DOI: https://doi.org/10.1134/S1063782616110130

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