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Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells

  • XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018
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Abstract

We report on the stimulated emission obtained in the wavelength range of 20.3–17.4 μm on the interband transitions at T = 8–50 K in HgCdTe quantum wells placed in a dielectric waveguide formed from wide-gap CdHgTe solid solution. Heterostructures with HgCdTe quantum wells are interesting for designing long-wavelength lasers operating in the wavelength range of 25–60 μm, which is not covered by currently available quantum cascade lasers. It is shown that the maximum temperature of stimulated emission is determined by the position of lateral maxima in the dispersion dependences in the first valence subband of the quantum well. Methods for suppressing nonradiative recombination in the structures with HgCdTe quantum wells are discussed.

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ACKNOWLEDGMENTS

This study was supported by the Russian Foundation for Basic Research, project no. 16-32-60172. Characterization of the structures using the measured photoluminescence spectra and calculated band spectrum was made in the framework of the state task for the Institute for Physics of Microstructures, Russian Academy of Sciences, theme no. 0035-2014-0201 and supported by the Ministry of Education and Science of the Russian Federation, project no. 4399.2018.2.The USU Femtospektr facility of the Center for Collective Use of the Institute for Physics of Microstructures, Russian Academy of Sciences was used.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    V. V. Rumyantsev, N. S. Kulikov, A. M. Kadykov, M. A. Fadeev, M. S. Zholudev, V. Ya. Aleshkin, V. V. Utochkin, S. V. Morozov & V. I. Gavrilenko

  2. Nizhny Novgorod State University, 603950, Nizhny Novgorod, Russia

    V. V. Rumyantsev, N. S. Kulikov, V. Ya. Aleshkin, V. V. Utochkin, S. V. Morozov & V. I. Gavrilenko

  3. Moscow State University, 119991, Moscow, Russia

    A. V. Ikonnikov & A. S. Kazakov

  4. Institute for Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, 630090, Novosibirsk, Russia

    N. N. Mikhailov & S. A. Dvoretskii

  5. Novosibirsk State University, 630090, Novosibirsk, Russia

    N. N. Mikhailov

Authors
  1. V. V. Rumyantsev
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  2. N. S. Kulikov
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  3. A. M. Kadykov
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  4. M. A. Fadeev
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  5. A. V. Ikonnikov
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  6. A. S. Kazakov
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  7. M. S. Zholudev
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  8. V. Ya. Aleshkin
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  9. V. V. Utochkin
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  10. N. N. Mikhailov
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  11. S. A. Dvoretskii
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  12. S. V. Morozov
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  13. V. I. Gavrilenko
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Correspondence to V. V. Rumyantsev.

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Translated by E. Bondareva

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Rumyantsev, V.V., Kulikov, N.S., Kadykov, A.M. et al. Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells. Semiconductors 52, 1375–1379 (2018). https://doi.org/10.1134/S1063782618110234

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