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Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition

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Abstract

The characteristics of silicon-oxide layers deposited by various technological methods are compared. It is shown that the catalytic method for obtaining silicon-oxide layers by molecular layering has a number of advantages. The main advantages are a low growth temperature, high-quality interface with a silicon substrate, and high growth rate of films. Studies by cathodoluminescence made it possible to evaluate the structural quality of silicon-oxide layers produced by molecular layering and confirmed the potential of this method in obtaining high-quality silicon-oxide films for broad practical application.

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ACKNOWLEDGMENTS

The study was carried out using equipment of the resource centers of St. Petersburg State University “Interdisciplinary center for nanotechnology,” “Innovation technologies of composite nanomaterials,” and “Optical and laser methods for studying substances.”

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Authors and Affiliations

  1. St. Petersburg State University, 199034, St. Petersburg, Russia

    A. P. Baraban, E. A. Denisov, V. A. Dmitriev, A. V. Drozd, V. E. Drozd & A. A. Selivanov

  2. Ioffe Institute, 194021, St. Petersburg, Russia

    R. P. Seisyan

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  1. A. P. Baraban
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  2. E. A. Denisov
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  3. V. A. Dmitriev
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  4. A. V. Drozd
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  5. V. E. Drozd
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  6. A. A. Selivanov
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  7. R. P. Seisyan
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Correspondence to V. E. Drozd.

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Translated by M. Tagirdzhanov

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Baraban, A.P., Denisov, E.A., Dmitriev, V.A. et al. Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition. Semiconductors 54, 506–510 (2020). https://doi.org/10.1134/S106378262004003X

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  • DOI: https://doi.org/10.1134/S106378262004003X

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