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Fabrication of a Ge–GeS:Nd Heterojunction and Investigation of the Spectral Characteristics

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Abstract

The technology of producing a Ge–GeS:Nd heterojunction and the relative spectral characteristics of the quantum efficiency of the fabricated heterojunction are investigated at different γ-irradiation doses. It is found that the photosensitivity increases at a dose of 30 krad in the spectral range of 0.4–2.0 μm. With increasing the radiation dose to 100 krad, the heterojunction photosensitivity decreases significantly.

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REFERENCES

  1. D. I. Bletskan, I. F. Kopinets, P. P. Pogoretskii, E. N. Sal’kova, and D. V. Chepur, Sov. Phys. Crystallogr. 20, 618 (1975).

    Google Scholar 

  2. D. I. Bletskan, V. I. Taran, and M. Yu. Sichka, Ukr. Fiz. Zh. 22, 1436 (1976).

    Google Scholar 

  3. R. S. Madatov, A. S. Alekperov, and O. M. Gasanov, Prikl. Fiz., No. 4, 11 (2015).

  4. D. I. Bletskan, N. V. Polozhinets, and D. V. Chepur, Sov. Phys. Semicond. 17, 802 (1983).

    Google Scholar 

  5. Li. Chun, H. Yang, P. S. Yayafri, Yu. Yifei, and C. Lingon, ACS Nano 6, 8868 (2012).

    Article  Google Scholar 

  6. K. U. Rajesh, L. Yi-Ying, K. Chia-Yung, R. T. Srinivasa, S. Raman, M. B. Karunakara, and Ankur, Nanoscale 8, 2284 (2016).

    Article  Google Scholar 

  7. L. Changying, L. Chun, G. Huayang, and W. Shuai, J. Mater. Chem. 3, 8074 (2015).

    Article  Google Scholar 

  8. I. Chen and J. X. Zhao, Sensors 12, 2414 (2012).

    Article  Google Scholar 

  9. V. F. Masterov, Semiconductors 27, 791 (1993).

    ADS  Google Scholar 

  10. K. Taylor and M. Darby, Physics of Rare-Earth Solids (Chapman and Hall, London, 1972).

    Google Scholar 

  11. R. S. Madatov, A. S. Alekperov, and Dzh. A. Maqerramova, Crystallogr. Rep. 60, 921 (2015).

    Article  ADS  Google Scholar 

  12. V. T. Mak, Semiconductors 30, 162 (1996).

    ADS  Google Scholar 

  13. A. P. Mamontov and I. P. Chernov, The Effect of Small Doses of Ionizing Radiation (Del’taplan, Tomsk, 2009) [in Russian].

    Google Scholar 

  14. V. M. Andreev, Semiconductors 33, 942 (1999).

    Article  ADS  Google Scholar 

  15. R. S. Madatov, A. S. Alekperov, O. M. Gasanov, and R. B. Bairamov, Prikl. Fiz., No. 5, 76 (2014).

  16. K. A. Askerov, A. Z. Abasova, and F. K. Isaev, Prikl. Fiz., No. 4, 94 (2004).

  17. A. Milnes and D. Feucht, Heterojunctions and Metal Semiconductor Junctions (Mir, Moscow, 1975; Academic, New York, 1972)

  18. D. I. Bletskan, I. F. Kopinets, and P. P. Pogoretskii, Sov. Phys. Crystallogr. 20, 618 (1975).

    Google Scholar 

  19. D. I. Bletskan, Sov. Phys. Semicond. 5, 1072 (1980).

    Google Scholar 

  20. M. N. Solovan, V. V. Brus, P. D. Maryanchuk, T. T. Kovalyuk, J. Rappich, and M. Gluba, Phys. Solid State 55, 2234 (2013).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Azerbaijan State Pedagogical University, Az-1000, Baku, Azerbaijan

    A. S. Alekperov, A. O. Dashdemirov & S. H. Jabarov

  2. Institute of Physics, Azerbaijan National Academy of Sciences, Az-1143, Baku, Azerbaijan

    N. A. Ismayilova

  3. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Az-1143, Baku, Azerbaijan

    S. H. Jabarov

Authors
  1. A. S. Alekperov
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  2. A. O. Dashdemirov
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  3. N. A. Ismayilova
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  4. S. H. Jabarov
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Correspondence to S. H. Jabarov.

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Translated by V. Bukhanov

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Alekperov, A.S., Dashdemirov, A.O., Ismayilova, N.A. et al. Fabrication of a Ge–GeS:Nd Heterojunction and Investigation of the Spectral Characteristics. Semiconductors 54, 1406–1409 (2020). https://doi.org/10.1134/S1063782620110044

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  • DOI: https://doi.org/10.1134/S1063782620110044

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