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Electron-excited luminescence of SiO2 layers on silicon

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Abstract

An analysis of cathodoluminescence and electroluminescence spectra of Si-SiO2 structures suggests a conclusion concerning the processes involved in excitation of the luminescence centers generated in the UV spectral region and their localization. The electroluminescence observed in this region of the spectrum is generated in excitation of luminescence centers localized in the immediate vicinity of the Si-SiO2 phase boundary. In the case of cathodoluminescence, the observed emission bands at ∼4.3 and ∼2.7 eV appear in excitation of the luminescence of silylene centers at the Si-SiO2 phase boundary.

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Authors and Affiliations

  1. St. Petersburg State University, Universitetskaya nab. 7-9, St. Petersburg, 199034, Russia

    A. P. Baraban, V. A. Dmitriev, Yu. V. Petrov & K. A. Timofeeva

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  1. A. P. Baraban
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  2. V. A. Dmitriev
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  3. Yu. V. Petrov
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  4. K. A. Timofeeva
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Correspondence to A. P. Baraban.

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Original Russian Text © A.P. Baraban, V.A. Dmitriev, Yu.V. Petrov, K.A. Timofeeva, 2012, published in Fizika Tverdogo Tela, 2012, Vol. 54, No. 6, pp. 1080–1083.

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Baraban, A.P., Dmitriev, V.A., Petrov, Y.V. et al. Electron-excited luminescence of SiO2 layers on silicon. Phys. Solid State 54, 1149–1152 (2012). https://doi.org/10.1134/S1063783412060066

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  • DOI: https://doi.org/10.1134/S1063783412060066

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