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Multitip semiconductor field emitters with new-type bilayer protecting coatings

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Abstract

We investigate the operation of multitip silicon field emitters with new-type bilayer metal—fullerene protective coatings in technical vacuum. The experiments indicate that such cathodes ensures emission current densities averaged over the cathode surface of about 0.5 A/cm2 and can be used in high-voltage devices including microwave electronic instruments as well as portable X-ray sources.

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Authors and Affiliations

  1. St. Petersburg State Technical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia

    G. G. Sominskii, T. A. Tumareva, E. P. Taradaev & M. V. Mishin

  2. Institute of Crystallography, Russian Academy of Sciences, Leninskii pr. 59, Moscow, 119333, Russia

    A. N. Stepanova

Authors
  1. G. G. Sominskii
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  2. T. A. Tumareva
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  3. E. P. Taradaev
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  4. M. V. Mishin
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  5. A. N. Stepanova
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Corresponding author

Correspondence to G. G. Sominskii.

Additional information

Original Russian Text © G.G. Sominskii, T.A. Tumareva, E.P. Taradaev, M.V. Mishin, A.N. Stepanova, 2015, published in Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 85, No. 1, pp. 138–141.

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Sominskii, G.G., Tumareva, T.A., Taradaev, E.P. et al. Multitip semiconductor field emitters with new-type bilayer protecting coatings. Tech. Phys. 60, 133–136 (2015). https://doi.org/10.1134/S1063784215010247

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  • DOI: https://doi.org/10.1134/S1063784215010247

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