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Photoluminescence of CdHgTe epilayers grown on silicon substrates

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Abstract

We have studied the photoluminescence (PL) spectra of thin layers of mercury cadmium telluride (CdHgTe) solid solutions grown by molecular beam epitaxy on silicon substrates. It is established that a disorder in the solid solution structure in these layers does not exceed that in the layers grown by the same method on GaAs substrates. The PL spectra of CdHgTe/Si samples exhibit emission lines characteristic of the structurally perfect material, in particular, the lines due to donor-acceptor recombination and the recombination of excitons bound to impurities.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    K. D. Mynbaev, N. L. Bazhenov, V. I. Ivanov-Omskiĭ, V. A. Smirnov, M. V. Yakushev, A. V. Sorochkin, V. S. Varavin, N. N. Mikhailov, G. Yu. Sidorov, S. A. Dvoretsky & Yu. G. Sidorov

  2. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    K. D. Mynbaev, N. L. Bazhenov, V. I. Ivanov-Omskiĭ, V. A. Smirnov, M. V. Yakushev, A. V. Sorochkin, V. S. Varavin, N. N. Mikhailov, G. Yu. Sidorov, S. A. Dvoretsky & Yu. G. Sidorov

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  1. K. D. Mynbaev
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  2. N. L. Bazhenov
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  3. V. I. Ivanov-Omskiĭ
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  4. V. A. Smirnov
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  5. M. V. Yakushev
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  6. A. V. Sorochkin
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  7. V. S. Varavin
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  8. N. N. Mikhailov
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  9. G. Yu. Sidorov
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  10. S. A. Dvoretsky
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  11. Yu. G. Sidorov
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Corresponding author

Correspondence to K. D. Mynbaev.

Additional information

Original Russian Text © K.D. Mynbaev, N.L. Bazhenov, V.I. Ivanov-Omskiĭ, V.A. Smirnov, M.V. Yakushev, A.V. Sorochkin, V.S. Varavin, N.N. Mikhailov, G.Yu. Sidorov, S.A. Dvoretsky, Yu.G. Sidorov, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 23, pp. 39–46.

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Mynbaev, K.D., Bazhenov, N.L., Ivanov-Omskiĭ, V.I. et al. Photoluminescence of CdHgTe epilayers grown on silicon substrates. Tech. Phys. Lett. 36, 1085–1088 (2010). https://doi.org/10.1134/S1063785010120060

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  • DOI: https://doi.org/10.1134/S1063785010120060

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