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Photoluminescence of CdHgTe based nanoheterostructures

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Abstract

We have studied the photoluminescence (PL) spectra of Cd x Hg1 − x Te/Cd y Hg1 − y Te nanohetero-structures grown by molecular beam epitaxy on CdTe/ZnTe/GaAs substrates. The width of potential wells in the structures was varied within d = 12−200 nm and the material composition was changed within x ∼ 0.25–0.40 in the well and y ∼ 0.68–0.82 in the barrier layers. The PL spectra of samples with d ≤ 33 nm exhibit transitions between quantum confinement levels. The samples with d > 50 nm display the PL due to excitons localized on composition fluctuations, which is characteristic of Cd x Hg1 − x Te epilayers with thicknesses above 3 μm. It is established that the exciton PL band in Cd x Hg1 − x Te exhibit broadening that is determined both by stochastic fluctuations of the composition and by its macroscopic inhomogeneities.

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Correspondence to K. D. Mynbaev.

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Original Russian Text © K.D. Mynbaev, N.L. Bazhenov, V.I. Ivanov-Omskiĭ, A.V. Shilyaev, V.S. Varavin, N.N. Mikhailov, S.A. Dvoretsky, Yu.G. Sidorov, 2010, published in Pis’ma v Zhurnal Tekhnicheskoĭ Fiziki, 2010, Vol. 36, No. 23, pp. 70–77.

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Mynbaev, K.D., Bazhenov, N.L., Ivanov-Omskiĭ, V.I. et al. Photoluminescence of CdHgTe based nanoheterostructures. Tech. Phys. Lett. 36, 1099–1102 (2010). https://doi.org/10.1134/S1063785010120102

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  • DOI: https://doi.org/10.1134/S1063785010120102

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