Abstract
Results of a comparative study of the internal quantum yield of AlGaAs/GaAs photovoltaic converters (PVCs) with variable position of the array of vertically coupled InGaAs quantum dots (QDs) are presented. It is established that the QD array placed immediately at the i-region/base interface does not change the PVC sensitivity compared to that for QDs arranged inside the i-region of the p-n junction. However, the QD array shifted to the base or the back potential barrier decreases the contribution of a base layer to the PVC photocurrent and reduces the photosensitivity of the QD-based medium.
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Original Russian Text © S.A. Blokhin, A.M. Nadtochiy, S.A. Mintairov, N.A. Kalyuzhny, V.M. Emel’yanov, V.N. Nevedomsky, M.Z. Shvarts, M.V. Maximov, V.M. Lantratov, N.N. Ledentsov, V.M. Ustinov, 2012, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2012, Vol. 38, No. 22, pp. 43–49.
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Blokhin, S.A., Nadtochiy, A.M., Mintairov, S.A. et al. Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters. Tech. Phys. Lett. 38, 1024–1026 (2012). https://doi.org/10.1134/S1063785012110193
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DOI: https://doi.org/10.1134/S1063785012110193