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Passivation of the GaP(111) surface by treatment in selenium vapors

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Abstract

Results of examination of structural phase transitions on the GaP(111) surface after heat treatment in selenium vapors in a vacuum chamber with a quasi-closed volume are described. The electrophysical characteristics of Schottky-barrier diodes on GaP(111) are studied before and after treatment in selenium vapors by measuring the current-voltage characteristics and by deep-level transient spectroscopy. It is found that, after treatment in selenium vapors, the Schottky-barrier height becomes dependent on the work function of the metal in accordance with the Schottky-Mott rule for an ideal diode. It is shown that a decrease in the density of surface electronic states in GaP(111) results from the formation of a Ga2Se3(111)(√3 × √3)-R30° surface phase with ordered stoichiometric gallium vacancies.

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Authors and Affiliations

  1. Voronezh State University of Engineering Technologies, Voronezh, 394036, Russia

    N. N. Bezryadin, G. I. Kotov, I. N. Arsent’ev, S. V. Kuzubov, Yu. N. Vlasov, G. A. Panin & A. V. Kortunov

  2. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. N. Bezryadin, G. I. Kotov, I. N. Arsent’ev, S. V. Kuzubov, Yu. N. Vlasov, G. A. Panin & A. V. Kortunov

  3. Voronezh Institute of the State Fire-Fighting Service, Ministry of Emergency Situations of the Russian Federation, Voronezh, 394052, Russia

    N. N. Bezryadin, G. I. Kotov, I. N. Arsent’ev, S. V. Kuzubov, Yu. N. Vlasov, G. A. Panin & A. V. Kortunov

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  1. N. N. Bezryadin
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  2. G. I. Kotov
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  3. I. N. Arsent’ev
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  4. S. V. Kuzubov
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  5. Yu. N. Vlasov
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  6. G. A. Panin
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  7. A. V. Kortunov
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Correspondence to N. N. Bezryadin.

Additional information

Original Russian Text © N.N. Bezryadin, G.I. Kotov, I.N. Arsent’ev, S.V. Kuzubov, Yu.N. Vlasov, G.A. Panin, A.V. Kortunov, 2014, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2014, Vol. 40, No. 3, pp. 20–26.

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Bezryadin, N.N., Kotov, G.I., Arsent’ev, I.N. et al. Passivation of the GaP(111) surface by treatment in selenium vapors. Tech. Phys. Lett. 40, 104–107 (2014). https://doi.org/10.1134/S1063785014020035

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  • DOI: https://doi.org/10.1134/S1063785014020035

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