Abstract
Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9R polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO2/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation.
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Original Russian Text © D.S. Korolev, A.A. Nikolskaya, N.O. Krivulin, A.I. Belov, A.N. Mikhaylov, D.A. Pavlov, D.I. Tetelbaum, N.A. Sobolev, M. Kumar, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 16, pp. 87–92.
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Korolev, D.S., Nikolskaya, A.A., Krivulin, N.O. et al. Formation of hexagonal 9R silicon polytype by ion implantation. Tech. Phys. Lett. 43, 767–769 (2017). https://doi.org/10.1134/S1063785017080211
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DOI: https://doi.org/10.1134/S1063785017080211