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Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas

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Abstract

The effect of epitaxial stresses on the excess-carrier dynamics and the terahertz radiation spectrum of the InyGa1–yAs films have been investigated by optical pump-probe and terahertz time-domain spectroscopy. It has been demonstrated that a InyGa1–yAs film with a higher mechanical stress has the shorter excesscarrier lifetime and broader terahertz radiation spectrum.

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Authors and Affiliations

  1. Moscow Technological University (MIREA), Moscow, 119454, Russia

    D. I. Khusyainov, A. M. Buryakov, V. R. Bilyk & E. D. Mishina

  2. Institute of Microwave Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia

    D. S. Ponomarev, R. A. Khabibullin & A. E. Yachmenev

Authors
  1. D. I. Khusyainov
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  2. A. M. Buryakov
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  3. V. R. Bilyk
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  4. E. D. Mishina
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  5. D. S. Ponomarev
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  6. R. A. Khabibullin
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  7. A. E. Yachmenev
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Corresponding author

Correspondence to D. I. Khusyainov.

Additional information

Original Russian Text © D.I. Khusyainov, A.M. Buryakov, V.R. Bilyk, E.D. Mishina, D.S. Ponomarev, R.A. Khabibullin, A.E. Yachmenev, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 22, pp. 48–54.

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Khusyainov, D.I., Buryakov, A.M., Bilyk, V.R. et al. Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas. Tech. Phys. Lett. 43, 1020–1022 (2017). https://doi.org/10.1134/S1063785017110220

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  • DOI: https://doi.org/10.1134/S1063785017110220

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