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A Chaotic Potential of Charged Dislocations in Group III-Nitride Heterojunctions

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Abstract

The structure of the chaotic potential caused by the electrostatic field of charged dislocations in group III-nitride heterojunctions is investigated. Taking into account the spatial dispersion of the dielectric response of a two-dimensional electron gas, the amplitude and scale of the chaotic potential in the junction plane are determined. It is shown that the parameters of the chaotic potential depend on the density of surface states and the concentration of dislocations.

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Funding

This work was supported by the Russian Foundation for Basic Research, project no. 19-52-80019 BRICS_t.

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Authors and Affiliations

  1. Peter the Great St. Petersburg Polytechnic University, 195251, St. Petersburg, Russia

    V. B. Bondarenko & A. V. Filimonov

  2. Alferov St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. V. Filimonov

  3. Indian Institute of Technology Madras, 600036, Chennai, Tamil Nadu, India

    Ravi Kumar

Authors
  1. V. B. Bondarenko
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  2. A. V. Filimonov
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  3. Ravi Kumar
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Correspondence to A. V. Filimonov.

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The authors declare that they have no conflict of interest.

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Translated by O. Kadkin

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Bondarenko, V.B., Filimonov, A.V. & Kumar, R. A Chaotic Potential of Charged Dislocations in Group III-Nitride Heterojunctions. Tech. Phys. Lett. 47, 8–10 (2021). https://doi.org/10.1134/S1063785021010053

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  • DOI: https://doi.org/10.1134/S1063785021010053

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