Abstract
We present experimental data and theoretical results for valence-band satellites in semiconductors, using the prototypical example of bulk silicon. In a previous publication we introduced a new approach that allows us to describe satellites in valence photoemission spectroscopy, in good agreement with experiment. Here we give more details; we show how the the spectra change with photon energy, and how the theory explains this behaviour. We also describe how we include several effects which are important to obtain a correct comparison between theory and experiment, such as secondary electrons and photon cross sections. In particular the inclusion of extrinsic losses and their dependence on the photon energy are key to the description of the energy dependence of spectra.
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Guzzo, M., Kas, J.J., Sottile, F. et al. Plasmon satellites in valence-band photoemission spectroscopy. Eur. Phys. J. B 85, 324 (2012). https://doi.org/10.1140/epjb/e2012-30267-y
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DOI: https://doi.org/10.1140/epjb/e2012-30267-y