Skip to main content
SpringerLink
Log in

Graphene field-effect devices

  • Published:
The European Physical Journal Special Topics Aims and scope Submit manuscript

Abstract.

In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices (FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  • G.E. Moore, Electronics 38, 114 (1965)

  • R.H. Dennard, F. Gaensslen, L. Kuhn, H. Yu, Tech. Dig. IEDM, 344 (1972)

  • G. Baccarani, M.R. Wordeman, R.H. Dennard, IEEE Trans. Electr. Dev. 31, 452 (1984)

    Google Scholar 

  • P. Packan, Science 285, 2079 (1999)

  • Y.-M. Lin, J. Appenzeller, Z.H. Chen, Z.G. Chen, H.-M. Cheng, P. Avouris, IEEE Electr. Dev. Lett. 26, 823 (2005)

    Google Scholar 

  • R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J. Kavalieros, A. Majumdar, M. Metz, M. Radosavljevic, IEEE Trans. Nanotechnol. 4, 153 (2005)

    Google Scholar 

  • K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Science 306, 666 (2004)

  • Y. Zhang, Y.-W. Tan, H.L. Stormer, P. Kim, Nature 438, 201 (2005)

    Google Scholar 

  • K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, M.I. Katsnelson, I.V. Grigorieva, S.V. Dubonos, A.A. Firsov, Nature 438, 197 (2005)

    Google Scholar 

  • C. Berger, Z. Song, X. Li, X. Wu, N. Brown, C. Naud, D. Mayou, T. Li, J. Hass, A.N. Marchenkov, E.H. Conrad, P.N. First, W.A. de Heer, Science 312, 1191 (2006)

  • M.C. Lemme, T.J. Echtermeyer, M. Baus, H. Kurz, IEEE Electr. Dev. Lett. 28, (2007)

  • S. Banerjee, M. Sardar, N. Gayathri, A.K. Tyagi, B. Raj, Appl. Phys. Lett. 88, 06211 (2006)

    Google Scholar 

  • A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K.S. Novoselov, S. Roth, A.K. Geim, Phys. Rev. Lett. 97, 187401 (2006)

    Google Scholar 

  • R.J. Nemanich, C.C. Tsai, G.A.N. Connell, Phys. Rev. Lett. 44, 273 (1980)

    Google Scholar 

  • J. Kong, N.R. Franklin, C. Zhou, M.G. Chapline, S. Peng, K. Cho, H. Dai, Science 287, 622 (2000)

    Google Scholar 

  • S.-I. Takagi, A. Toriumi, M. Iwase, H. Tango, IEEE Trans. Electr. Dev. 41, 2357 (1994)

    Google Scholar 

  • Z. Ren, Tech. Dig. IEDM, 51 (2002)

  • K. Uchida, S.-I. Takagi, Appl. Phys. Lett. 82, 2916 (2003)

    Google Scholar 

  • G. Tsutsui, T. Hiramoto, IEEE Trans. Electr. Dev. 53, 2582 (2006)

    Google Scholar 

  • T. Ohta, A. Bostwick, T. Seyller, K. Horn, E. Rotenberg, Science 313, 951 (2006)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074, Aachen, Germany

    T. J. Echtermeyer, M. Baus & H. Kurz

  2. Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany

    M. C. Lemme, J. Bolten & H. Kurz

  3. Paul-Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117, Berlin, Germany

    M. Ramsteiner

Authors
  1. T. J. Echtermeyer
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. C. Lemme
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J. Bolten
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. Baus
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. Ramsteiner
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. H. Kurz
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to T. J. Echtermeyer.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Echtermeyer, T., Lemme, M., Bolten, J. et al. Graphene field-effect devices. Eur. Phys. J. Spec. Top. 148, 19–26 (2007). https://doi.org/10.1140/epjst/e2007-00222-8

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1140/epjst/e2007-00222-8

Keywords

Search

Navigation