High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (2021) GaN Substrates

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Published 26 November 2010 • ©2010 The Japan Society of Applied Physics
, , Citation Shuichiro Yamamoto et al 2010 Appl. Phys. Express 3 122102 DOI 10.1143/APEX.3.122102

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Author affiliations

1 Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.

2 Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.

3 Advanced Technology Research Laboratories, Sharp Corporation, Tenri, Nara 632-8567, Japan

4 Optoelectronics Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan

Dates

  1. Received 28 September 2010
  2. Accepted 2 November 2010
  3. Published

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Abstract

We demonstrate high-efficiency green and yellow-green single-quantum-well light-emitting diodes (LEDs) grown on semipolar (2021) GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at a driving current of 20 mA under a pulsed condition with a 10% duty cycle are 9.9 mW and 20.4% for the green LED and 5.7 mW and 12.6% for the yellow-green LED, respectively. The electroluminescence linewidth narrowing, which is related to the band-filling effect caused by potential fluctuations, is not observed.

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10.1143/APEX.3.122102