Abstract
N-type Ga2O3 homoepitaxial thick films were grown on β-Ga2O3(010) substrates by ozone molecular beam epitaxy. The epitaxial growth rate was increased by more than ten times by changing from the (100) plane to the (010) plane. The carrier concentration of the epitaxial layers could be varied within the range of 1016–1019 cm-3 by changing the Sn doping concentration. Platinum Schottky barrier diodes (SBDs) on 1.4-µm-thick β-Ga2O3 homoepitaxial layers were demonstrated for the first time. The SBDs exhibited a reverse breakdown voltage of 100 V, an on-resistance of 2 mΩ cm2, and a forward voltage of 1.7 V (at 200 A/cm2).