21.7 kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension

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Published 15 May 2012 ©2012 The Japan Society of Applied Physics
, , Citation Hiroki Niwa et al 2012 Appl. Phys. Express 5 064001 DOI 10.1143/APEX.5.064001

1882-0786/5/6/064001

Abstract

Ultrahigh-voltage 4H-SiC mesa PiN diodes are fabricated and characterized. An original space-modulated two-zone junction termination extension (SM-two-zone JTE) has realized a laterally tapered profile of the JTE dose, which enlarged the tolerance to the deviation of effective JTE dose compared with a conventional two-zone JTE. We demonstrate a SiC PiN diode with a breakdown voltage of 21.7 kV (81% of the ideal breakdown voltage calculated from the epilayer structure), which is the highest breakdown voltage among any semiconductor devices ever reported.

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