Abstract
An equilibrium calculation for the vapour growth of GaAs in an inert gas-hydrogen mixed carrier system is described. The partial pressures of gaseous- and gallium containing-species in equilibrium with GaAs are calculated for temperatures, chlorine to carrier gas mole ratios and mole fractions of hydrogen relative to the inert gas. It is shown that the general feature of the equilibrium pressures of the reactants for the inert gas- and inert gas-hydrogen mixed-carrier systems is similar to that of a hydrogen carrier system, and that GaAs tends to vaporize into the gas phase with the increase of the mole fraction of the inert gas. An application of the analysis to the vapour growth of GaAs with H2 introduction is discussed.