Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers

and

Copyright (c) 1979 The Japan Society of Applied Physics
, , Citation Yoshiji Horikoshi and Yoshitaka Furukawa 1979 Jpn. J. Appl. Phys. 18 809 DOI 10.1143/JJAP.18.809

1347-4065/18/4/809

Abstract

The threshold current of InGaAsP–InP double hetetostructure lasers has been investigated through measurements of the temperature dependence of carrier lifetime and radiative efficiency. Both the carrier lifetime and the radiative efficiency decrease noticeably above the break point temperature as observed in the Ith vs. T relation. The decrease of the carrier lifetime is explained by considering additional non-radiative recombination centers with 0.3 eV activation energy. The origin of this center is also discussed.

Export citation and abstract BibTeX RIS

10.1143/JJAP.18.809