A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions

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Copyright (c) 1980 The Japan Society of Applied Physics
, , Citation Takashi Mimura et al 1980 Jpn. J. Appl. Phys. 19 L225 DOI 10.1143/JJAP.19.L225

1347-4065/19/5/L225

Abstract

Studies of field-effect control of the high mobility electrons in MBE-grown selectively doped GaAs/n-AlxGa1-x As heterojunctions are described. Successful fabrication of a new field-effect transistor, called a high electron mobility transistor (HEMT), with extremely high-speed microwave capabilities is reported.

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