Effects of Nitrogen Incorporation on Gap-State Density in Chemically Vapor-Deposited Amorphous Silicon

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Copyright (c) 1982 The Japan Society of Applied Physics
, , Citation Goro Sasaki et al 1982 Jpn. J. Appl. Phys. 21 L377 DOI 10.1143/JJAP.21.L377

1347-4065/21/6A/L377

Abstract

Temperature dependence of dark conductivity and field in a chemically vapor-deposited amorphous SiNx (x≃0.2) alloy are presented. The a-SiNx film exhibits little hopping conduction and large field effect as compared with undoped CVD a-Si. The gap-state density near the Fermi level in the CVD a-SiNx film is evaluated as 2×1018 cm-3 eV-1 which is one-fifth of that in an undoped film.

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10.1143/JJAP.21.L377