Abstract
Temperature dependence of dark conductivity and field in a chemically vapor-deposited amorphous SiNx (x≃0.2) alloy are presented. The a-SiNx film exhibits little hopping conduction and large field effect as compared with undoped CVD a-Si. The gap-state density near the Fermi level in the CVD a-SiNx film is evaluated as 2×1018 cm-3 eV-1 which is one-fifth of that in an undoped film.