Abstract
The effect of annealing a W-GaAs (Se+ implanted) Schottky diode at high temperatures was investigated. The diode showed an excellent stability against annealing. The ideal factor n and the barrier height φB of the diode stayed more or less constant at values of 1.1–1.2 and 0.73 V, respectively, for the temperature variation of 800°C–950°C. Using He+ backscattering analysis, it was shown that the interdiffusion in W and GaAs couples takes place at 900°C.