Abstract
A GaInAsP/InP laser (λ=1.3 µm) with a current blocking layer made by Be implantation has been fabricated. Be-ions were implanted with 70 keV into an n-InP substrate at room temperature and 2.2×1014 cm-2 of dose. Thermal annealing was applied in a furnace during the LPE (Liquid Phase Epitaxial) growth. The breaking of the forward bias associated with the blocking region was 2 V. The minimum threshold current was 160 mA for 2.5 µm width of waveguide and 250 µm cavity length.