Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams

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Copyright (c) 1984 The Japan Society of Applied Physics
, , Citation Kenji Gamo et al 1984 Jpn. J. Appl. Phys. 23 L293 DOI 10.1143/JJAP.23.L293

1347-4065/23/5A/L293

Abstract

50 keV Ar+ or focused Au+ were irradiated in a trimethyl aluminum atmosphere to investigate characteristics of ion beam assisted deposition. About 80 nm thick films were deposited at a dose of 1×1016/cm2. The film composition and its depth dependence was measured by Auger electron spectroscopy. It was found that the film contains oxygen, carbon and aluminum, and the atomic ratio varies across the film depth. The atomic ratio was 0.8(O):1.1 (C):1.4(Al) at the surface and was 0.8(O):3.3(C):1(Al) inside. A direct maskless pattern deposition was also done using 50 keV focused ion beams.

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10.1143/JJAP.23.L293