Abstract
N-channel MOS FET's have been fabricated in super-thin polysilicon film on quartz substrate. The thickness of the film had an important role in improving the electrical properties. Moreover, grain boundary passivation by the hydrogen from a plasma-SiN film has been developed to increase the field effect mobility. The field effect mobility is more than 20 cm2/V·s at the polysilicon thickness of 150–200 Å; and threshold voltage and leakage current are reduced to 6 V and 10-13 A/µm, respectively. The device obtained in this work can be used not only for flat panel matrix displays but also for other applications.