Abstract
WN film formation by a reactive rf sputtering and WN/GaAs Schottky contact characteristics were investigated with the intent of forming a gate for self-aligned MESFETs. WN/GaAs contacts show good Schottky diode characteristics even after high temperature annealing. Both the ideality factor n and flat band barrier height φB0C of contacts showed nearly constant values of about 1.1 and 1.15 eV, respectively, for annealing at about 800°C and for annealing longer than 20 min.