Effect of Dislocations on Sheet Carrier Concentration of Si-Implanted, Semi-Insulating, Liquid-Encapsulated Czochralski Grown GaAs

Copyright (c) 1985 The Japan Society of Applied Physics
, , Citation Fumiaki Hyuga 1985 Jpn. J. Appl. Phys. 24 L160 DOI 10.1143/JJAP.24.L160

1347-4065/24/2A/L160

Abstract

The quantitative effect of dislocations on the sheet carrier concentration of a Si-implanted and annealed layer in semi-insulating GaAs is investigated microscopically by the van der Pauw method using small Hall chips with a 40×40 µm2 measurement area. Dislocations affect the sheet carrier concentration within about a 75 µm radius area, and the carrier concentration increases 3×1015 cm-3 per dislocation in this area.

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10.1143/JJAP.24.L160