Abstract
Transverse mode controlled high power AlGaAs lasers with a window stripe buried multiquantum well structure have been developed using the simple and reliable Zn-diffusion-induced disordering process. The maximum pulsed light output of the laser is 240 mW. The lasers operate in a fundamental transverse mode up to 100 mW. The threshold current and external differential quantum efficiency depend on the total window region length, because of large free carrier absorption in the Zn diffused window region. By controlling the diffusion depth and window region length, the lasers with low threshold current and high external differential quantum efficiency are realized.