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Photothermal Beam Deflection (PBD) Image of Certain GaAs Wafers

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Copyright (c) 1985 The Japan Society of Applied Physics
, , Citation Tsuguo Sawada et al 1985 Jpn. J. Appl. Phys. 24 L938 DOI 10.1143/JJAP.24.L938

1347-4065/24/12A/L938

Abstract

The photothermal beam deflection (PBD) technique utilizes a change of refractive index of the gas surrounding a sample, and a thermoelastic deformation on the sample surface induced by the heat generated as a result of the light absorption. The elastic property of the sample has been measured nondestructively and without contact using PBD. This technique was applied for the first time to the inspection of a dislocation existing in a GaAs semiconductor wafer.

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10.1143/JJAP.24.L938