Abstract
When Ga or Al atoms are evaporated on a clean GaAs surface in an As-free atmosphere, they are quite mobile and migrate very rapidly along the surface even at low temperatures. This characteristic are utilized for growing high-quality GaAs and AlAs layers at very low temperatures by alternately supplying Ga or Al atoms and As4 molecules to the GaAs substrate. Applying this method, GaAs layers and AlAs–GaAs quantum well structures with reasonable photoluminescence characteristics are grown at 200°C and 300°C, respectively.