Abstract
Fine crystals of Si having spherical shapes of less than 200 nm, as well as hybrid particles of Si and β-SiC were prepared by a gas evaporation method using an arc discharge as the heat source. Si particles always contain stacking faults and twins which are categorized as growth faults. All the planar faults in a particle occur in the same orientation (parallel to a [110] direction). The nature of these planar faults was examined in terms of crystal growth using an electron microscope. As a result, it has been concluded that these spherical Si particles are crystallized from liquid droplets which condense from Si vapors.