Structure and Electronic Transport of Highly Conductive Langmuir-Blodgett Films of Tridecylmethylammonium-Au(dmit)2

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Copyright (c) 1991 The Japan Society of Applied Physics
, , Citation Yasuhiro F. Miura et al 1991 Jpn. J. Appl. Phys. 30 3503 DOI 10.1143/JJAP.30.3503

1347-4065/30/12R/3503

Abstract

Electronic transport measurements are reported for Langmuir-Blodgett (LB) films of tridecylmethylammonium-Au(dmit)2 for 300-4 K. The conductivity after electrochemical oxidation is 30-50 S/cm at room temperature, increases with decreasing temperature, and begins decrease at about 200 K. The conductivity at lower temperatures is explained by two-dimensional variable range hopping (2D VRH). The thermoelectric power (S) is positive and well fitted by a linear combination of the temperature dependence of 2D VRH (Sv\proptT1/3) and that of metal (Sm\proptT). These results can be explained by a model in which highly conductive metallic regions are separated by thin weakly conductive regions. The UV/visible absorption spectra and the X-ray diffraction patterns indicate that a large structural change occurs accompanied by electrochemical oxidation.

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10.1143/JJAP.30.3503